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RHP030N03
Transistors
4V Drive Nch MOSFET
RHP030N03
Structure
Silicon N-channel MOSFET
Dimensions (Unit : mm)
MPT3
Features
1) Low On-resistance.
4.5
1.6
1.5
2) 4V drive.
(1)
(2)
(3)
0.4
0.4
1.5
0.5
1.5
0.4
Applications
Switching
Packaging specifications
Package
Taping
(1)Gate
(2)Drain
(3)Source
Inner circuit
3.0
Abbreviated symbol : KZ
(3)
Type
Code
Basic ordering unit (pieces)
T100
1000
RHP030N03
Absolute maximum ratings (Ta=25 ° C)
(2)
? 1
? 1 ESD PROTECTION DIODE (1)
? 2 BODY DIODE
? 2
(1) Source
(2) Gate
(3) Drain
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
30
± 20
Unit
V
V
Drain current
Reverse drain current
Total power dissipation
Channel temperature
Range of storage temperature
Continuous
Pulsed
Continuous
Pulsed
I D
I DP ? 1
I DR
I DRP ? 1
P D
Tch
Tstg
3
10
3
10
500
2 ? 2
150
? 55 to + 150
A
A
A
A
mW
W
° C
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 When mounted on a 40 × 40 × 0.7mm ceramic board
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a)
Limits
250
62.5 ?
Unit
° C/W
° C/W
? When mounted on a 40 × 40 × 0.7mm ceramic board
Rev.A
1/3
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